| 摘要 |
PURPOSE:To form a stabilized titanium nitride film having uniform film thickness by a method wherein the titanium nitride film is formed on the surface of a titanium film using an instantaneous annealing method. CONSTITUTION:An aluminum wiring conductor 3 is formed on the field oxide film 2 located on a semiconductor substrate 1 as a lower wiring layer, and a titanium film 4 is formed thereon by performing an RF sputtering method for example. Then, nitrogen is ion-implanted into the titanium film 4. Subsequently, a titanium nitride film 5 is formed by performing the instantaneous annealing method such as the irradiation of infrared rays, for example, at 550 deg.C for 10 seconds using the residual gas (air) in an annealing furnace in such a manner that titanium is not oxidized. The film 5 has a constant composition, it has no local defect, it is chemically and physically stable, and the hillock on a through hole part and the aluminum recrystallization generating on the semiconductor device in the heat treatment performed thereon can be prevented completely.
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