发明名称 Dual gate tunable oscillator.
摘要 <p>A dual gate field effect transistor (FET) (101) is configured as a self-buffering local oscillator (7) of a tuner by arranging the FET in a cascode configuration in which the first gate electrode (G1) is coupled to the source electrode (S) through an oscillation conditioning network (203) and also to a frequency determining network (300), the second gate electrode (G2) is coupled to signal ground through a negligible impedance (109) and the drain electrode (DE) is utilized as the output of the oscillator.</p>
申请公布号 EP0269427(A2) 申请公布日期 1988.06.01
申请号 EP19870310387 申请日期 1987.11.25
申请人 RCA CORPORATION 发明人 MUTERSPAUCH, MAX WARD
分类号 H03B1/00;H03B5/12 主分类号 H03B1/00
代理机构 代理人
主权项
地址