| 摘要 |
A nonvolatile memory, especially an electrically erasable and programmable read only memory (EE-PROM) is disclosed. In each of the memory cells (MC) comprising the EE-PROM, four transistors are formed, that is a read transistor (Q11) and a first selecting transistor (Q21), both connected in series, and a write-erase transistor (Q12) and a second selecting transistor (Q22), both connected in series, the write-erase transistor has a floating gate (FG) being provided with, partially, a thin insulation layer thereunder, the read transistor also has a floating gate (FG) being provided with a thick insulation layer thereunder, the first and second selecting transistors are turned to ON or OFF together. |
