| 摘要 |
PURPOSE:To obtain a semiconductor laser excellent in controllability and reproducibility which oscillates stably in a fundamental transversal mode, by embedd the skirt part of a laminated structure in the form of a projected stripe with a light reflection layer of high impurity density and a cap layer, and inverting the polarity by diffusing the impurity into the buried surface of the laminated structure. CONSTITUTION:A laminated structure composed of a first clad layer 2 of first conductivity type, an active layer 3 of a first conductivity type, a second clad layer 4 of a first conductivity type, and a cap layer 5 of first conductivity type is formed on a semi-insulating semiconductor substrate 1. The laminated structure is constituted in the form of a projecting stripe, and its skirt part is embedded with a light reflection layer 6 of second conductivity type and a cap layer 7 of second conductivity type in the manner in which the side surface of the active layer 3 is completely covered with a layer uniform thickness along the projecting portion. A first electrode 10 is formed on a cap layer 5, and a second electrode 17 is arranged on a cap layer 7. A gap between them is insulated with an insulating film 8. The light reflection layer 6 and the cap layer 7 are brought into a state of high impurity density, and the impurity is diffused into at least the buried boundary surface of the laminated structure of invert the polarity. |
