| 摘要 |
PURPOSE:To improve input protecting breakdown strength, by making the bonding depth of a diffused layer, to which a power source formed on a substrate is connected, deeper than the bonding depth of a diffused layer having another conductivity type. CONSTITUTION:An element isolating region (insulating film) 22 is formed on a P-type silicon substrate 21. N<+> type diffused layers 23 and 24 are formed on both ends of the element isolating region 22. An insulating film 25 is further formed. Contact holes 23 and 24 are provided for connection with the N<+> diffused layers. Metal wirings 28 and 29 are provided so as to bury the contact holes 26 and 27. A passivation film 31 is formed on said wirings. A Vcc terminal 30 (bonding pad) is provided at the passivation film on the wiring 28. The bonding depth of the N<+> type diffused layer 23, which is connected to the Vcc terminal 30, is deeper than the other N<+> type diffused layer 24 in this structure. As a result, even if a high voltage (surge) is applied to the Vcc terminal 30 from the outer lead pins of an integrated circuit, short circuit between the metal wiring 28 and the substrate 21 can be sufficiently prevented. |
