| 摘要 |
PURPOSE:To improve the ohmic contact with a semiconductor layer thereby to enhance a photoelectric conversion efficiency and to improve the reliability of a photovoltaic device by providing a metallic amorphous layer in the state of contacting with the semiconductor layer having a second conductivity type. CONSTITUTION:A layer of a transparent electrode 12 made of ITO or the like is formed on a transparent glass substrate 11, a p-type amorphous silicon layer 13 as a semiconductor layer having a first conductivity type, an i-type a-Si layer 14 as an intrinsic semiconductor layer, and an n-type a-Si layer 15 as a semiconductor layer having a second conductivity type are sequentially laminated thereon, and an a-SiBe layer 16 as a metallic amorphous layer is eventually laminated thereon. The layer 16 operates as a function of an electrode, and a photovoltaic power lead is connected to the electrode 12 and the layer 16. Since the layer 16 is provided in contact with the layer 15 at the remote side as seen from the light incident side in this manner, the ohmic contact with the layer 15 is improved to remarkably improve a photoelectric conversion efficiency. |
