| 摘要 |
PURPOSE:To prevent dielectric breakdown even if a voltage being an ON dielectric strength of a FET or over and being an OFF dielectric voltage or below is impressed to a circuit of the output stage by connecting a resistor symmetrically between a P-channel FET and an N-channel FET. CONSTITUTION:One end of resistors R1, R1 is connected to the source of FETs 4, 5, a voltage being a half or over of the impressed voltage (VH-VL) is impressed to the resistors R1, R2 and only a voltage being the ON-state dielectric voltage or below is impressed to the FETs 4, 5 in ON-state by selecting the resistor R1 as the interval resistance RP or over in the transient state and selecting the resistor R2 as the internal resistance RN or over and no breakdown is caused. Even in this case, when the internal resistances RP, RN are small, most of the voltage (VH-VL) is impressed to the resistors R1, R2 by selecting the resistors R1, R2 as[(VH-VL)/(R1+R2+RP+RN)]<=IM, and no breakdown voltage of the FETs 4, 5 being in on-state is not induced, where VH is a high voltage potential, VL is a low voltage potential and IM is a value of peak currents of the FET which is smaller. |
