| 摘要 |
PURPOSE:To shorten the time of removing a photo-resist film used as a mask by etching the photo-resist film as a lower layer in an anisotropic manner up to predetermined thickness, employing an silicon group resist film formed according to a pattern as a mask, removing the silicon group resist film through etching and continuing the anisotropic etching of the photo-resist film. CONSTITUTION:A photo-resist film 13 is shaped thickly onto a film 11 consisting of a metal such as Al for forming a semiconductor element in order to reduce back scattering at the time of electron-beam exposure, and a resist film 14 for electron-beam exposure is shaped thinly onto the film 13, exposed by electron beams, developed and etched according to a prescribed pattern. The photo-resist film 13 under the film 14 is etched by using oxygen gas as a reaction gas. The silicon group resist film 14 is removed through etching with employing CF4 gas as an etching gas. The photo-resist film 13 as an irregular-shaped first layer is etched by using oxygen gas an etching gas. Since the whole thickness of the photo-resist film 13 as the first layer is also brought to one third of the thickness of the photo-resist film applied at first at that time, the time of the removal of the photo-resist film 13 after etching the wiring film in Al can be shortened. |
