| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for an electrode of small contact resistance used for a 3-5 group compound semiconductor and to provide a 3-5 group compound semiconductor element containing the obtained electrode. SOLUTION: Relating to a method for manufacturing an electrode used for a 3-5 group compound semiconductor expressed by a formula Inx Gay Alz N(where, x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1), a process wherein, after the surface of 3-5 group compound semiconductor is processed in the aqueous solution containing alkaline metal hydroxide and H2 O2 , an electrode is formed on the surface, is provided. A 3-5 group compound semiconductor element comprises an electrode manufactured by the above method. |
