| 摘要 |
<p>High-index fluid, for immersion lithography, comprises a liquid; several first type of atoms that are located in the liquid, where: the several first type atoms comprise of at least a cluster of several first type of atoms that is aligned in the form of a fullerene exhibiting an interior space; and at least a second atom, located in the interior space of the cluster. Independent claims are included for: (1) the formation of the liquid comprising providing many fullerenes containing a hollow shell, which comprises several first type of atoms, where each fullerene includes an interior space; placing the second atom in the interior space of the several fullerenes, and placing at least one of the several fullerenes with the second atom in the interior space in a liquid, where the second atom changes the property of a liquid and the hollow fullerene shell prevents the second atom from affecting the material that is exposed to the fluid; (2) the preparation of a semiconductor component comprising providing a work piece, alignment of a projection lens system in the vicinity of the work piece, placement of the liquid between the work piece and the projection lens system and machining of the work piece with the projection lens system; (3) a semiconductor component obtained by the above process; and (4) a lithography process for semiconductor components comprising provision of an immersion exposure tool with a wafer holder, a projection lens system, an immersion head, which is designed to place the liquid between the projection lens system and the wafer holder, and an energy source in the vicinity of the projection lens system, provision of the work piece with a superimposed radiation-sensitive material, positioning of the work piece on the wafer holder, placement of the fluid between the work piece and the projection lens system, and exposing the radiation-sensitive material of the work piece with the radiation from an energy source.</p> |
