发明名称 |
Semiconductor memory device for reducing cell area |
摘要 |
A semiconductor memory device with a reduced cell area and a high-speed data transfer by modifying a circuit layout. The semiconductor memory device includes: a cell area with a first and a second cell areas; a plurality of Y decoders of which one Y decoder selects bit line sense amplifiers in the first and the second cell areas; IO sense amplifiers provided with a first IO sense amplifier and a second IO sense amplifier; a plurality of first data lines for transferring a data sensed and amplified at the bit line sense amplifier of the first cell area; and a plurality of second data lines for transferring a data sensed and amplified at the bit line sense amplifier of the second cell area.
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申请公布号 |
US7580313(B2) |
申请公布日期 |
2009.08.25 |
申请号 |
US20060589038 |
申请日期 |
2006.10.30 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
KIM DONG-KEUN;LEE JAE-JIN |
分类号 |
G11C8/00;G11C7/00;G11C7/10;G11C7/18 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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