| 摘要 |
PURPOSE:To obtain a memory having a small area and a large capacitance by utilizing all first and second insulating films formed on the periphery of second electrode wirings as the dielectric film of a capacitor. CONSTITUTION:After a field SiO2 film 11 is formed on a P-type Si substrate 10, a thin SiO2 film 12 is formed. Then, first electrode wirings 13 are formed on the film 12. Thereafter, a thin gate SiO2 film 14 is formed on the periphery of the wirings 13. Subsequently, the film 14 is partly removed to form a hole. Then, second electrode wirings 16 are formed. Further, an SiO2 film 17 is formed, and an impurity region 18 is simultaneously formed as a source. Thereafter, third electrode wirings 19 are formed. Then, phosphorus ions are implanted to form an impurity regin 20 as a drain. Successively, a PSG film 21 is formed as an interlayer insulating film on the whole surface, and metal wirings 22 are then formed to complete a semiconductor device. |
