发明名称 |
DYNAMIC MEMORY DEVICE HAVING A SINGLE-CRYSTAL TRANSISTOR ON A TRENCH CAPACITOR STRUCTURE AND A FABRICATION METHOD THEREFOR |
摘要 |
<p>A DYNAMIC MEMORY DEVICE HAVING A SINGLE-CRYSTAL TRANSISTOR ON A TRENCH CAPACITOR STRUCTURE AND A FABRICATION METHOD THEREFOR Dynamic random access memory (DRAM) devices are taught wherein individual cells, including an access transistor and a storage capacitor are formed on a single-crystal semiconductor chip, and more particularly a three-dimensional dynamic random access memory (DRAM) device structure is described having a single-crystal access transistor stacked on top of a trench capacitor and a fabrication method therefor wherein crystallization seeds are provided by the single-crystal semiconductor area surrounding the cell and/or from the vertical sidewalls of the trench and wherein the access transistor is isolated by insulator. In the structure, a trench is located in a p+ type substrate containing heavily doped N+ polysilicon. A composite film of SiO2/Si3N4/Sio2 is provided for the capacitor storage insulator. A thin layer of SiO2 is disposed over the polysilicon. A lightly doped p-type epi silicon layer is located over the substrate and SiO2 layer. The access transistor for the memory cell is located on top of the trench capacitor. An N+ doped material connects the source region of the transistor to the polysilicon inside the trench. A medium doped p-region on top of the trench surface may be provided in case there is any significant amount of leakage current along the trench surface.</p> |
申请公布号 |
CA1232362(A) |
申请公布日期 |
1988.02.02 |
申请号 |
CA19860518033 |
申请日期 |
1986.09.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LU, NICKY C-C. |
分类号 |
H01L27/10;G11C11/34;H01L21/74;H01L21/822;H01L21/8242;H01L27/00;H01L27/108;(IPC1-7):H01L27/10;H01L21/72 |
主分类号 |
H01L27/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|