发明名称 FORMATION OF ORIENTING RESIST AND PATTERN
摘要 PURPOSE:To improve an image contrast by orienting crystal which is soluble in or reactive to water as organic material crystal at right angles to a substrate. CONSTITUTION:Ester-based liquid crystal which is high polymer liquid crystal reactive to and soluble in water is used as an organic high polymer crystal material and 4-azitochalcone is introduced as a photosensitive group in the high polymer crystal by a proper means. The ester-based liquid crystal is cyanophenyl ester-based liquid crystal, etc. This ester-based liquid crystal 12 is mixed with a proper volatile solvent to obtain proper viscosity and applied by one micron over a semiconductor substrate 11 and the solvent is vaporized at proper temperature after the application to leave the liquid crystal' and an electric or magnetic field is applied to orient the liquid crystal. This oriented and applied liquid crystal is irradiated with an ultraviolet ray or electron beam 13 to make photosensitive groups at the irradiated part 12A react, and thus the molecular weight of a high polymer to form a latent image in liquid crystal resist. Consequently, a resist pattern with a high contrast is formed.
申请公布号 JPS6319646(A) 申请公布日期 1988.01.27
申请号 JP19860164088 申请日期 1986.07.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HASHIMOTO KAZUHIKO;NOMURA NOBORU;UENO ATSUSHI
分类号 G03F7/038;G02F1/13;G03C1/00;G03C1/73;G03C5/00;G03F7/00;G03F7/004;G03F7/26;H01L21/027 主分类号 G03F7/038
代理机构 代理人
主权项
地址
您可能感兴趣的专利