| 摘要 |
PURPOSE:To obtain a high density magnetic bubble by injecting the number of vertical Bloch line pairs specified in number to binary data information into the border magnetic wall of a magnetic bubble. CONSTITUTION:By injecting, into the border magnetic wall of a magnetic bubble, the number of vertical Bloch line pairs of a formula to the binary data information expressed by l1, l2, l3...ln (where li=1 or 0), the (n) pcs. of information is stored by each one magnetic bubble. Thus, since one magnetic bubble has plural pieces of information, a memory density can be easily raised even by the same exposing and etching level as the conventional magnetic bubble memory technology, and at the magnetic wall part of the circumstance of one magnetic bubble, the vertical Bloch line (VBL) pair of about 32 pairs can be easily held.
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