| 摘要 |
PURPOSE:To obtain easily a single longitudinal mode laser by a method wherein a part of the clad layer at the site corresponding to the internal reflecting surface of the IRI laser is replaced with a material having different refractivity. CONSTITUTION:An n-type InP buffer layer 2, a p-type InP current block layer 3, an n-type InP current block layer 4 and an n-type InGaAsP mask layer 5 for etching are grown according to first growth on an n-type InP substrate 1. Then SiO2 is deposited on the etching mask layer 5, a window is opened in a stripe type according to photo etching, and the etching mask layer 5 is exposed in the stripe type. A resist stripe is formed vertically on the SiO2 stripe in succession, the n-type InGaAsP layer 5 is etched according to an H2SO4 etchant using the SiO2 stripe and the resist as masks, a stripe type window of SiO2 is provided, and moreover a part of the n-type InGaAsP layer is left in the window. Then etching is performed using HCl as an etchant and using a mask, and after the n-type InGaAsP layer 5 in the SiO2 stripe type window is etched to be removed, etching is performed again to form a projecting part 12.
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