发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the decrease in adhesive strength caused by the interposition of an oxide film by a method wherein a titanium layer is formed at the lead wire adhering position of an aluminum electrode. CONSTITUTION:An aluminum electrode 3 is formed by vapor-deposition on an N-type emitter electrode and a P-type base electrode, a titanium layer 4 is formed by vapor-deposition on the lead wire adhering position of the aluminum electrode 3. This titanium layer 4 is formed by performing the commonly used method, and the film of 200Angstrom or thereabout is considered enough. By the formation of the titanium layer on the lead wire adhering position of the aluminum electrode, the oxygen on the surface of the aluminum electrode is adsorbed by titanium, the oxide film is eliminated, and the adhesive strength between the aluminum electrode and the titanium layer can be increased.
申请公布号 JPS62282441(A) 申请公布日期 1987.12.08
申请号 JP19860126533 申请日期 1986.05.30
申请人 NEC KANSAI LTD 发明人 IKEGAMI GORO
分类号 H01L29/43;H01L21/28;H01L21/60 主分类号 H01L29/43
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