SEMICONDUCTOR LASER DEVICE

摘要

PURPOSE:To oscillate the titled device with a single longitudinal mode even in the variation of temperature or current values by a method wherein a stripe- form groove whose width is narrow in the neighborhood of the center in a longitudinal direction is formed on a substrate, and then a clad layer, an active layer, etc. are formed thereon. CONSTITUTION:The stripe-form groove 2 whose width is narrow in the neighborhood of the center in the longitudinal direction is formed on the semiconductor substrate 1 composed of semiconductor having a forbidden band width the same as that of a semiconductor layer used for the active layer 4 or a width smaller than that. The first clad layer 3 of a forbidden band width larger than that of the semiconductor layer serving as the active layer 4 and a refractive index smaller than that of the layer is formed thereon. Further, the semiconductor layer serving as the active layer 4 and the second clad layer 5 of the same structure as that of the first one 3 are successively formed.