发明名称 |
Method of making a bipolar transistor with polycrystalline contacts |
摘要 |
Disclosed herein is a semiconductor device manufacturing process applicable to a bipolar semiconductor integrated circuit device in which a base electrode (9) is directly extracted from an active base region (61) through a superposed layer of a polysilicon film (601) and a metal silicide film (501) while an emitter electrode (10) is partially formed by a polysilicon film (602) and a contact hole is defined to form a base metal silicide film with the polysilicon film being employed as a mask. Consequently, the distance between an emitter layer (71) and a base electrode hole (50) is reduced without necessity of including margins of emitter and base electrode wires extending over respective holes in the said distance.
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申请公布号 |
US4709469(A) |
申请公布日期 |
1987.12.01 |
申请号 |
US19860940607 |
申请日期 |
1986.12.11 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIRAO, TADASHI |
分类号 |
H01L21/285;H01L29/423;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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