| 摘要 |
PURPOSE:To improve the heat dissipation property of a semiconductor substrate and to cut down the cost thereof by a method wherein the semiconductor substrate is provided with an insulating coat layer formed on the whole outer surface of a semiconductor substrate main body formed of athin plate consisting of titan, a titan alloy or beryllium oxide and a copper layer formed on the upper surface of the insulating coat layer. CONSTITUTION:Such an insulating coat layer 2 as an oxide coat layer or a nitride coat layer is formed on the whole outer surface of a semiconductor substrate main body 1, a copper layer 3 is formed on the upper surface of the insulating coat layer 2 and a surface treatment is performed. The semiconductor substrate main body 1 has a thickness of 0.08-several mm, for example, and also, is formed of a hoop material 8 consisting of titan, a titan alloy or beryllium oxide of the prescribed size. As titan, a titan alloy or beryllium oxide is used for the semiconductor substrate main body in such a way, the heat dissipation property of a semiconductor substrate is improved and the durability can be upgraded. |
