| 摘要 |
PURPOSE:To increase the breakdown resistance of a Darlington-transistor for audio while improving reliability by forming a Zener diode operated at low voltage onto the same substrate between emitter-base electrodes for the Darlington-transistor. CONSTITUTION:A high concentration region 5 is shaped into an isolation region 4 formed at the same time as two base regions 2 in a Darlington-transistor, a reverse conductivity type region 6 is shaped into the region 5 to constitute a Zener diode, and the Zener diode is each connected between an emitter electrode 7 and a base electrode 8 for said Darlington-transistor. When the two P-type base regions 2 and emitter regions 3 are formed onto an N-type silicon substrate 1, the isolation P-type region 4 is shaped at the same time as the P-type base regions 2. The high-concentration P-type region 5 is formed into the region 4. When the emitter regions 3 are shaped, the N-type region 6 is formed simultaneously in the region 5. Each electrode 7-11 is shaped, and an anode electrode 9 is connected to the emitter electrode 7 and a cathode electrode 10 to the base electrode 8.
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