| 摘要 |
A method of operating a solid state photodetector device which has N photodetectors formed on a first substrate portion connected to a readout stage, through a transition zone having at least one storage zone and a transfer gate, and a multiplexer of the charges transfer type which are on a second substrate portion. The second substrate portion is biased to a voltage which is negative with respect to that of the first substrate portion. Then, after integration of the charges from the photodetectors and tansfer thereof into the multiplexer in the usual way by leaving a charge Qo in the storage zone, the transfer gate is biased so that the voltage under this gate is less than the biasing voltage of the first substrate portion. Then the gate in the storage zone is biased so that the potential under this gate is between the bias voltage of the first substrate portion and the potential under the transfer gate so as to remove the charge Qo. |
