发明名称 MODULATING METHOD FOR OPTICAL OUTPUT OF SEMICONDUCTOR LASER
摘要 PURPOSE:To prevent the breakdown of an element and chirping due to a current surge by a method wherein a semiconductor laser having an active layer constructed in a superlattice is driven by a DC-constant current, the optical confinement of a laser resonator is controlled by using the field dependence of the refractive index of the superlattice, and an optical output is modulated by the modulation of a voltage. CONSTITUTION:When a current is injected from a central electrode 8 toward a common electrode 6, this semiconductor laser makes oscillation in a gain waveguide type. When a voltage is impressed between electrodes 7 and 6, the refractive index of an active layer 3 of superlattice structure lowers in accordance with the distribution of field intensity. Therefore, there occurs a refractive index difference between the central portion (wherein the refractive index is large) of the active layer 3 positioned at a place just below the electrode 8 to which an electric field does not extend or extends very weakly, and the outside portion (wherein said index is small) thereof, and it becomes possible to confine a light in a central narrow region by a refractive index waveguide resistance. Thus, the oscillation is made in a lateral fundamental mode. In this way, it becomes possible to modulate the intensity of an optical output only by modulating a voltage impressed on the electrode 7, without changing an amount of current injected from the electrode 8.
申请公布号 JPS62242379(A) 申请公布日期 1987.10.22
申请号 JP19860084298 申请日期 1986.04.14
申请人 OMRON TATEISI ELECTRONICS CO 发明人 IMANAKA KOICHI
分类号 H01S5/06;H01S5/062 主分类号 H01S5/06
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