发明名称 PHOTODETECTION CONTROL SEMICONDUCTOR ELEMENT
摘要 <p>PURPOSE:To integrate multiple logical semiconductor elements formed into miniaturized size using optical modulation at low power consumption by a method wherein the B-M shifting phenomena changing the photoabsorbing loss are electrically controlled from outside after manufacturing the semiconductor elements. CONSTITUTION:A degeneratable region doped with impurity in high concentration of a semiconductor element is depleted by voltage impression. Thus, the formation of depletion layer in the region is controlled to change the basic light absorbing end on the semiconductor elements further changing the absorption of light with wavelength corresponding to the energy exceeding the basic absorbing end. Thus, the light with wavelength is detected and controlled by the change in light absorption. Through these procedures, multiple miniaturized photodetection controlling semiconductor elements performing the photocontrol such as photodetection, optical switching and modulation etc. can be integrated on one substrate together with other logical semiconductor elements at low power consumption. Furthermore, the signal transmission between the elements on a chip of electronic logical integrated circuit as well as between the chips can be extremely accelerated than usual by the optical transmission.</p>
申请公布号 JPS62221169(A) 申请公布日期 1987.09.29
申请号 JP19860065271 申请日期 1986.03.24
申请人 TOKYO INST OF TECHNOL 发明人 FURUYA KAZUHITO;SUEMATSU YASUHARU;MATSUMURA MASAKIYO;ARAI SHIGEHISA
分类号 H01L31/10;G01J1/02;G02F1/015;G02F1/025;H01L31/14 主分类号 H01L31/10
代理机构 代理人
主权项
地址