发明名称 HIGH-FREQUENCY TRANSISTOR
摘要 PURPOSE:To equalize the operation of each transistor element by making the diameters of bonding wires at both end sections of a transistor element row smaller than that of a bonding wire at the central section of the transistor element row. CONSTITUTION:Bonding wires 3, 4 are stretched up to a lead electrode 6 for a stem through an electrode 5 for a capacitor chip from emitter electrodes 2 for transistor elements 7, 7A formed in a plurality of transistor chips 1 arranged in parallel. The diameters of the bonding wires 4 connected to the transistor elements 7A at both end sections are shaped in size smaller than those of the bonding wires 3 connected to the transistor elements 7 at a central section. Accordingly, the operation of the transistor elements is equalized, thus increasing an output and improving efficiency.
申请公布号 JPS62206844(A) 申请公布日期 1987.09.11
申请号 JP19860049702 申请日期 1986.03.06
申请人 NEC CORP 发明人 SUZUKI HIDEO
分类号 H01L21/60 主分类号 H01L21/60
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