发明名称 PACKAGE FOR HIGH FREQUENCY SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To obtain a package, whose input and output are stable, by laminating a first conductor layer, a dielectric layer and a second conductor layer on a substrate having a high frequency semiconductor element, grounding the first conductor, arranging the second conductor in the vicinity of a power source conductor, at the same level, and grounding said power source conductor layer. CONSTITUTION:On a ceramic substrate 1, a grounding conductor layer 2-1, a dielectric layer 3 having a thickness of H and a power source supplying conductor layer 4 are laminated. The first capacitor is formed by the conductors 4 and 2-1 and the dielectric 3. Gaps 5 (width G) are formed on both sides of the conductor 4 and at the same level of the conductor 4 on the dielectric 3 at the four corners of the substrate 1. Thus a gap type capacitor is formed. On the grounding conductor 2-1, a high frequency semiconductor element 6 is attached. Input signal lines 7 and 8 are printed, and the element 6 is connected to the conductors 4, 7 and 8. Since the thin material 3 having a large dielectric constant is used, a large capacitance can be set owing to the presence of two kinds of the capacitors and the value of characteristic impedance can be set low; the power source voltage can be stabilized especially in a high frequency region and the input and output signals can be stabilized.
申请公布号 JPS62199039(A) 申请公布日期 1987.09.02
申请号 JP19860042731 申请日期 1986.02.27
申请人 SUMITOMO ELECTRIC IND LTD 发明人 SEKIGUCHI TAKESHI;FUKUDA KEIICHI;SUZUKI TOMIHIRO
分类号 H01L23/04;H01L23/02;H01L23/12;H01L23/66 主分类号 H01L23/04
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