| 摘要 |
PURPOSE:To reduce the absolute value of a voltage of a selection signal by setting the potential of a partial semiconductor region to a first potential, and setting the potential of the remaining region by a second power source to a second potential of the same polarity as that of the first potential and larger absolute value to set the absolute value of the threshold voltage of a transfer gate to small value. CONSTITUTION:p-Type impurity regions 20, 30, 40 are formed on an n-type semiconductor substrate 10. A power source 50 of a voltage VPW is connected from the region 20 with the substrate 10, and a reverse bias is applied to set the potential of the region 20 to -VPW. A power source 60 of voltage VSW(VPW <VSW) is connected from the regions 30, 40 with the substrate 10, and a reverse bias is applied to set the potentials of the regions 30, 40 to -VSW. A photodetec tor 21 is formed on the region 20. A transfer gate selector 700 is formed on the region 30, and a vertical charge transfer element driver 800 is formed on the region 40. Thus, the threshold voltage of the transfer gate can be reduced as compared with that of the transfer gate of the conventional solid-stage image pickup device.
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