| 摘要 |
PURPOSE:To decrease proximity effect without deteriorating performance in an electron-optical system to enable a pattern to become fine with high precision, by forming a resist film through an incident electron-interrupting film, which is made of heavy metal or material containing heavy metal, on a pattern- formed plane. CONSTITUTION:A silicon oxidizing film 2 is formed on the surface of a silicon substrate 1 or on a surface. An incident electron-interrupting film such as a tungsten film 3, made of heavy metal or material containing heavy metal, is formed thereon. Then, a resist film for electron beams such as a negative-type silicon-containing resist film 4. is formed thereon by coating. Then, when a pattern is pictured on the silicon-containing resist film 4 to be developed using prescribed developing solution, the pattern 4' of the silicon-containing resist film is formed with highly precise patterning. Replacing a base material of the resist film by tungsten enables mutual interaction between neighboring exposure patterns to be sufficiently reduced to widely decrease proximity effect. Then, the tungsten film is selectively removed, with the silicon-containing resist film pattern 4' serving as mask, to obtain a part 3' which is covered with the silicon-containing resist film pattern 4'.
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