| 摘要 |
PURPOSE:To avoid defects such as crackings in a wafer by a method wherein, after a predetermined metal electrode is formed on a low resistance diffused layer of a predetermined size formed in one side of a substrate of a high specific resistivity, the substrate is finished to have a predetermined thickness and a low resistance layer which has the conductivity type opposite to that of the low resistance diffused layer is formed by ion implantation, laser annealing or the like. CONSTITUTION:A window of a predetermined size is formed in an oxide film 2 of a predetermined thickness and an n-type low resistance layer 3 is formed in a p-type silicon substrate 1 of a high specific resistivity by phosphorus diffusion or the like. After that, a nitride film 4 or the like is formed over the whole surface and a predetermined window is formed in the nitride film 4 above the n-type low resistance layer 3 and a metal electrode 5 is formed. Then the substrate 1 of the high specific resistivity is finished to have a predetermined thickness by a means such as polishing and etching and ions of boron or the like are implanted into the back surface of the substrate 1 and the back surface is activated by laser annealing to form a p-type low resistance layer 6. |
