| 摘要 |
A mobility-modulation FET utilizes a mobility-modulation system in which the mobility mu of the carriers within the channel is modulated by a signal voltage applied to gate electrodes. More particularly, in order to eliminate the limit in the response speed dependent upon the channel transit time of the carriers, a mobility-modulation system in which the channels are so formed as to vary the carrier mobility in response to the applied gate voltage is utilized, which is different from the carrier density modulation system, to thereby increase the response speed considerably.
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