OPTICAL INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To alleviate an adverse influence of a dislocation or a defect in a substrate to a laser by forming a recess at a position of the substrate to form the laser, and burying the recess with a conductive GaAs to form a buffer layer. CONSTITUTION:A recess is formed on a semi-insulating substrate 1, and the recess is buried with a P-type GaAs by an epitaxially growing method to form a buffer layer 2. The layer 2 alleviates an adverse influence of a dislocation or a defect in the substrate 1 to the layer units 2-8. The alleviating effect can be increased by deepening the recess. many FETs 20 are composed on the substrate 1 in addition to the lasers 2-8. In this case, the lasers 2-8 and the FETs 20 are formed on the same surface irrespective of the depth of the recess. Accordingly, a problem of wiring stepwise difference due to the increased thickness of the buffer layer does not occur.