| 摘要 |
PURPOSE:To avoid gas pockets by a method wherein a dummy part is added to a U-groove and the dummy part form a crossing part or a large width part which has a larger aperture than the other part of the U-groove and chemical vapor deposition of filling material is carried out under depressurized conditions. CONSTITUTION:Even if polycrystalline silicon is made to grow on the other part of a U-groove, a cavity 20a remains at the center part of a dummy part 22c. If chemical vapor phase deposition is continued in this state, growth gas, for instance SiH4, is made to flow into a tunnel cavity 20b in the part other than the dummy part 22c from the cavity 20a at the center part of the dummy part 22c to fill the cavity 20b with polycrystalline silicon. Although the cavity 20a is not yet completely filled when the cavity 20b is completely filled with polycrystalline silicon, the chemical vapor phase deposition is discontinued at this stage. If Al is applied like conventional examples and patterned, an Al dot 18b is left between electrode wirings 18. However, the Al dot 18b does not cause the short-circuit between the electrode wirings 18.
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