| 摘要 |
PURPOSE:To simplify manufacturing processes remarkably, by carrying out a film forming process and an etching process of a compound semiconductor thin film in the same vacuum container. CONSTITUTION:An n-type GaAs substrate 101 is provided on a carbon susceptor, which is placed in a vacuum container in a compound semiconductor thin film manufacturing apparatus using an MOCVD method. After evacuation, an organic metal compound, which is to become a raw material gas, and raw material gas for a group V element such as arsine AsH3 are introduced in the vacuum container. The GaAs substrate 101 is heated by heating method of high frequency induction heating and the like. Then, the following layers are sequentially laminated at appropriate ratios: an n-type GaAs buffer layer 102, an n-type GaAlAs clad layer 103, a GaAs active layer 104, a p-type CaAlAs clad layer 105, and an n-type GaAs blocking layer 106. |
