发明名称 MANUFACTURE OF SEMICONDUCTOR LASER
摘要 PURPOSE:To prevent the generation of projecting longitudinal stripes on an etched mirror plane by forming a stripe pattern after coating the mirror plane completely by spreading a positive type resist having a thickness of 1/2 or more the depth of the mirror plane after forming the etched mirror plane. CONSTITUTION:On an N-type substrate 1, an N-type cladding layer 2, an active layer 3, a P-type cladding layer 4, a P-type cap layer 5 are laminated and further on the surface, a pattern for an etched mirror is formed by use of a three-layer mask. By using it as an etching mask, reactive ion beam etching using chlorine gas is performed to form an etched mirror plane 10 having a predetermined depth. Next, the three-kind resist is removed and the mirror plane 10 is newly coated with a positive type resist 12 completely. A ridge guide 6 is formed on the mirror plane 10, thereby preventing the generation of projecting longitudinal stripes on the mirror plane 10.
申请公布号 JPS62139378(A) 申请公布日期 1987.06.23
申请号 JP19850280343 申请日期 1985.12.13
申请人 NEC CORP 发明人 MATSUMOTO SHOHEI
分类号 H01S5/00 主分类号 H01S5/00
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