| 摘要 |
PURPOSE:To decrease writing current by packing 'Permalloy(R)' into the lower part in the fine pores of an anodically oxidized film formed on the surface of Al or the alloy thereof and iron into the upper part thereof. CONSTITUTION:The anodically oxidized film 2 is formed on the surface of a substrate 1 consisting of the Al or Al alloy. The part of the anodically oxidized film 2 in contact with the Al layer 1 is a thin semi-conductive barrier layer 3 and the many fine pores 4... are formed in the upper part of the barrier layer 3. The fine pores 4 are straight tubular cavities and are so arranged that the longitudinal direction thereof is perpendicular to the film plane of the medium. The thickness of the anodically oxidized film 2 is about 1.5-5mum and the depth of the fine pores 4... is similarly about 1.5-5mum. The 'Permalloy(R)' 5 is packed in the part near the barrier layer 3 in the lower layer of the inside spaces of such fine pores 4.... The 'Permalloy(R)' 5 is packed in the layer to the thickness ranging 0.25-0.6 times, more preferably 0.4-0.5 times the depth of the fine pores 4....
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