| 摘要 |
PURPOSE:To produce high purity fine SiC powder in a high yield by mixing SiO powder with a material contg. carbon and SiC powder and heat treating the mixture at a specified temp. CONSTITUTION:A mixture of fine SiO powder with a material contg. carbon is mixed with SiC powder. The resulting mixture as starting material is heat treated by holding at 1,400-2,000 deg.C. The SiO powder is preferably mixed with the material contg. carbon in about 1.4-3.0 molar ratio of C/SiO. beta-SiC powder is used as the SiC powder and the preferred amount of the powder used is 0.1-100pts.wt. per 100pts.wt. in total of the SiO powder and the material contg. carbon. By this method, high purity fine SiC powder can be produced with a simple equipment in a high yield. |
