| 摘要 |
PURPOSE:To obtain the titled single crystal with less generation of defects in high yield by using a seed crystal having a specified facial azimuth to pull a single crystal, and cutting out a (001) face wafer in the direction inclined to the lifting shaft to an angle determined by the facial azimuth of the single crystal. CONSTITUTION:The III-V compd. semiconductor single crystal (e.g., GaAs, GaP, InAs, InP, etc.) is grown by a pull method to produce a single crystal for forming a (001) facial azimuth wafer. In the production, a seed crystal having (11l) (where l=1.5-4) facial azimuth by Miller indices is pulled up, and a (001) face wafer is cut out in the direction inclined to the lifting shaft to an angle determined by the facial azimuth of the single crystal. Since the twinning and formation of polycrystals are reduced, a single crystal is easily grown, the material loss is reduced, and the yield of (001) face wafers can be improved. Furthermore, the improvement of yield due to the decrease in defects caused by the local deposition of high-concn. impurities when the high-concn. impurities are added can be realized.
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