| 摘要 |
PURPOSE:To keep homogeneity in a plane of the thickness of a growing layer, to form a current blocking layer and a light absorbing layer with good reproducibility and to enhance a production yield rate of elements, by sequentially forming the current blocking layer and the light absorbing layer under the state a strip region between two grooves is covered by an insulating film, thereafter removing the insulating film, and sequentially forming a clad layer and the like. CONSTITUTION:Two parallel grooves 10 are formed in a specified region of a first-conductivity type semiconductor substrate 11. An insulating film 20 is formed on a stripe region 21 between the two grooves 10. A second-conductivity type semiconductor layer and a first-conductivity semiconductor layer are sequentially laminated on the exposed surface of the semiconductor layer are sequentially laminated on the exposed surface of the semiconductor substrate 11 and on said groove 10 except for the part on the insulating film 20. After the insulating film 20 is removed, at least a first-conductivity type clad layer, an active layer having a forbidden band width larger than or equal to the forbidden band width of said first- conductivity type semiconductor layer, and a second-conductivity type clad layer are sequentially laminated on said first-conductivity type semiconductor layer including the strip region 21. Thus the homogeneity in the plane of the growing layer by a liquid-phase epitaxial growing method is formed with good reproducibility, flat growing surface is obtained and the manufacturing yield rate of the element can be improved. |
