发明名称 RESIN-SEALED METHOD FOR RESIN-SEALED SEMICONDUCTOR DEVICE
摘要 PURPOSE:To simultaneously remove a void under a gate, a void, a swell on an air bent side surface, and an inner void by pouring resin from the gate to a cavity at a low velocity, and then switching to a high speed operation to seal resin. CONSTITUTION:A resin is filled from a pot through a gate to a cavity, and a semiconductor element of a lead frame is resin-sealed with the resin. The lead frame which places the element is set in the cavity and molds are clamped, resin is filled from the pot through the gate to the cavity, and the element is resin-sealed with the resin in the cavity. The resin is poured from the gate to the cavity at a low speed 1 as shown by the time immediately after the resin is fed to the cavity, and the speed is then switched to a high speed operation 2 to resin seal the element. Thus, a void, a swell on the surface of a molded product and an inner void can be eliminated.
申请公布号 JPS62125635(A) 申请公布日期 1987.06.06
申请号 JP19850265659 申请日期 1985.11.26
申请人 NEC CORP 发明人 TAKAHASHI ATSUSHI;MATSUBARA YUJI
分类号 H01L21/56;B29C45/02;B29C45/14;B29C45/77;B29L31/34 主分类号 H01L21/56
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