| 摘要 |
PURPOSE:To accelerate the filming speed in epitaxial growing system using thermochemical reaction enabling the film to be formed at low temperature by a method wherein a reactive gas is reacted and decomposed by electronic cyclotron resonance energy to form a single crystal semiconductor on a surface to be formed. CONSTITUTION:Assuming the pressure in a reactive space to be 3X10<-3>Torr, Ar as non-productive gas is fed at 200cc/min from a pipe 18. Further hydrogen or halogen gas is led-in for purifying or etching a surface to be formed. At this time, any organic impurity can be removed more effectively by irradiating the surface with ultraviolet rays 6. MIcrowaves with frequency of 2.45GHz are supplied at the output of 200-800W e.g. 400W with the resonance intensity in magnetic field 5, 5' adjusted to resonate within the range of 875+ or -100 gauss. When a silicon single crystal substrate is applied for a substrate 10 meeting said requirements to forma non-single crystal semiconductor e.g. a silicon semiconductor on the surface to be formed, the filming speed can attain to 20Angstrom /sec at the substrate temperature of 750 deg.C, in an embodiment.
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