| 摘要 |
PURPOSE:To obtain easily an a-Si unmagnifying sensor arranged in a row, by providing independently thin films for ohmic contact on the boundary surface between a series of a-Si films and each electrode. CONSTITUTION:When an a-Si film 2, and an N<+>-Si film 3 are formed on an insulative substrate 1, a peripheral edge forms itself into a taper like shape, so that a step-cut does not occur at the time of deposition of a metal film 5. A resist mask 6 is coated, a patterning of electrode is performed, and the mask 6 is eliminated. The N<+>-Si film 3 is eliminated by an etching in which the metal film 5 is used as a mask, and a sensor element E is completed. According to this constitution, cross-talk is sufficiently small because the N<+>-Si films to obtain ohmic contact are separated and independent for each element. The slope of peripheral edge of the a-Si film 2 is gentle, so that the breaking of wire of electrode does not occur and an one-dimensional unmagnifying sensor is easily obtained.
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