发明名称 MAGNETORESISTANCE EFFECT ELEMENT
摘要 PURPOSE:To improve the reliability and the productivity, by constructing a terminal section to have a four-layer structure consisting of a chromium film, a conductive film, a reinforcing film and a protecting film. CONSTITUTION:In a terminal section 2a, a thin chromium (Cr) film 3 having a thickness of 400-500Angstrom is formed on an insulating substrate 1. A thin film 2 is formed on the thin Cr film 3. Further, an about 2,000Angstrom thick reinforcing film 4 of permalloy and an about 500-1,000Angstrom thick protecting film 5 of gold (Au) are superposed thereon. A passivation film 5 with a thickness of about 2mum is also formed over the whole surface except this terminal section 2a. Such construction ensures a sufficient bonding strength between a soldering material 8 and the terminal section 2a and the protecting film prevents the terminal section 2a from being oxidized.
申请公布号 JPS62115790(A) 申请公布日期 1987.05.27
申请号 JP19860228122 申请日期 1986.09.29
申请人 HITACHI LTD 发明人 TAMURA KATSUYOSHI;SHIROHASHI KAZUO;KANAI HIROMI
分类号 H01L43/02 主分类号 H01L43/02
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