发明名称 INFRARED DETECTORS
摘要 High quality performance infrared photodetectors and a method for making them from a semiconductor material. The semiconductor material is irradiated with an electron beam to produce defect levels in a semiconductor material thereby improving the performance of the photodetectors.
申请公布号 US3700897(A) 申请公布日期 1972.10.24
申请号 USD3700897 申请日期 1971.02.05
申请人 NASA USA 发明人 CHRIS GROSS;ROBERT J. MATTAUCH
分类号 G01J5/28;(IPC1-7):G01J5/10 主分类号 G01J5/28
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