| 摘要 |
PURPOSE:To prevent a transparent conductive film and a metal film formed through an amorphous semiconductor thin film from electrically shortcircuiting by detecting a pinhole on the way of forming the thin film and removing the transparent conductive film exposed with the pinhole. CONSTITUTION:A glass substrate 1 on which an SnO2 film 2 is formed as a transparent conductive film is placed on a tray 41, conveyed to a reaction chamber 11, an amorphous silicon P-type layer 31 and an I-type layer 32 are formed, and conveyed to a load locking chamber 21. A probe light is emitted from a light source 23 through a window 22 and a mirror 27 to an amorphous silicon film on the substrate 1, reflected light is incident to a photosensor 26, an X-Y stage 42 is moved to detect a pinhole 5, a laser beams 29, 29 from a laser light source 25 are emitted through mirrors 28, 29 to bake the film 2 under a pinhole, thereby removing it. A tray 41 is conveyed to the chamber 11, an amorphous silicon N-type film 33 is formed, the side of the removed portion 20 of the SnO2 film is coated with the film 33, and an aluminum film 4 is deposited. |
