| 摘要 |
PURPOSE:To ensure stable horizontal transverse mode controllability, and to lower a threshold by the sufficient throttling of injection currents by forming an optical guide layer with a rib striped type projecting section and shaping a diffusion region having the same conduction type as the optical guide layer into a reverse bias type second clad layer formed onto the optical guide layer. CONSTITUTION:An n-type AlxGa1-xAs first clad layer 2, an un-doped AlyGa1-yAs active layer 3 and a p-type AlzGa1-zAs optical guide layer 11 are grown on an n-type GaAs substrate 1 in succession. A striped mask pattern 12 coating only a section in a current injection region on the optical guide layer 11 is shaped. The exposed section of the optical guide layer is etched while using a mask pattern as a protective film to form a groove, and an n-type AlxGa1-xAs second clad layer 9 and a p-type GaAs contact layer 7 are grown on the optical guide layer 11 shaped in rib structure. A mask pattern is formed, Zn is diffused selectively until it reaches a rib section in the optical guide layer 11, and a p-type diffusion region 10 is shaped, thus completing laser element structure.
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