| 摘要 |
PURPOSE:To inhibit the generation of soft error due to the irradiation of alphaparticles, to improve resistance to noise and to upgrade the reliability of a device by a method wherein the drains of two transistors which store the information of a memory cell are each fixed with a storage capacitor. CONSTITUTION:As an initial state, it is assumed that the potential VI of the drain 18 of an MOSFET 10 is a high potential VH' that the potential of the drain 19 of an MOSFET 11 is the earth potential and that they are stably maintained. At this time, the capacity of the drain 18 of the MOSFET 10 becomes the sum of a storage capacitor 16 and a coupling capacity 23 and is sufficiently large. Accordingly, the potential of the drain 18 of the MOSFET 10 is reduced the amount to be leveled down by injection of electrons produced by the irradiation and so on of alpha-rays and inversion of the holding is prevented. Moreover, as the initial state, even in case the potential V2 of the drain 19 of the MOSFET 11 is the high potential VH and the potential VI of the drain 18 of the MOSFET 10 in the earth potential, a storage capacitor 17 and the coupling capacitor 23 show the same effect, inversion of the holding is prevented and a soft error the can be decreased. |
