| 摘要 |
<p>PURPOSE:To eliminate the need for a process by manual labor and to permit the quick correction of a chipping part by exposing the surface of a substrate to a prescribed reactive gas atmosphere, accelerating the film forming reaction of a reactive gas by excitation rays and selectively depositing a thin film consisting of a prescribed material on the chipping part thereby repairing the chipping part. CONSTITUTION:A disilane 12 is supplied through a reactive gas supply nozzle 10 into a reaction chamber 7 so that the atmosphere of the disilane 12 is maintained in the reaction chamber 7. UV rays 9a of a prescribed wavelength are irradiated from a light source 9 provided in a vacuum chamber 8 on the rear surface of a reticle 6. The UV rays 9a transmit the inside of the reaction chamber 7 only through a white spot defective part 6a formed by the chipping of a light shielding film 5 of the reticle 6. The disilane is excited near the optical path thereof an the precipitation reaction of polycrystalline silicon is accelerated. A polycrystalline silicon film 18 is thereby selectively deposited to the white spot defective part 6a through which the UV rays 9a are penetrated, by which the defective part 6a is repaired.</p> |
