| 摘要 |
A metal gate MISFET comprises a metal gate electrode on a semiconductor substrate, a side wall insulation film, and a source-drain region which is formed on the surface of the semiconductor substrate on both sides of the side wall insulation film. Then, a cobalt silicide film is formed on the source-drain region. In this step of manufacturing the MISFET, since the cobalt silicide film is sealed with the silicon nitride film at the time of oxidizing the surface of the substrate of a gate portion, the property of the cobalt silicide film will never be deteriorated. As a consequence, the metal-gate field effect transistor having a low parasitic resistance of the source-drain region can be obtained.
|
