| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem that a conventional photoelectric conversion apparatus employing crystalline semiconductor particles has a low conversion efficiency. SOLUTION: In a method for manufacturing a photoelectric conversion apparatus, many first conductivity-type crystalline semiconductor particles 3 are arranged on a substrate 1 to become one electrode, an insulating substance 2 is made to interpose between the particles 3, and second conductivity-type semiconductor layers 4 and 5 are formed on top of the particles 3. In this method, a material gas diluted with a hydrogen gas is decomposed and deposited on the particles 3 to form the layers 4 and 5, and a concentration of the hydrogen gas to that of the material gas is set to be lower in the upper part 5 of the second conductivity type semiconductor layer than in the lower part 4.</p> |
