发明名称 Method of applying a resist.
摘要 <p>In a photoresist process which comprises a process for spin-coating a substrate (7) with a resist (10), a process for transferring a mask pattern (4, 5) onto the coated resist film followed by exposure (8), and a developing process for forming a pattern on the substrate after the pattern (4, 5) has been exposed. When the developed pattern of the resist pulsates with the increase or decrease of parameters in the process of applying resist (10), the value of the parameter is set to a value that corresponds to an extreme value of the pulsation.</p>
申请公布号 EP0205148(A2) 申请公布日期 1986.12.17
申请号 EP19860107872 申请日期 1986.06.10
申请人 HITACHI, LTD. 发明人 ITO, TETSUO;TANUMA, MASAYA;NAKAGOMI, YOSHIYUKI;KADOTA, KAZUYA;KOBAYASHI, KAZUNARI
分类号 B05D7/00;B05D1/32;B05D1/40;B05D3/06;G03F7/16;H01L21/027;H01L21/30;H01L21/302;(IPC1-7):G03F7/16 主分类号 B05D7/00
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